advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 20v capable of 2.5v gate drive r ds(on) 14m surface mount package i d 38a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 31.3 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.25 continuous drain current, v gs @ 4.5v 24 pulsed drain current 1 140 gate-source voltage + 16 continuous drain current, v gs @ 4.5v 38 parameter rating drain-source voltage 20 1 ap9t18gh/j rohs-compliant product 200809123 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g d s to-251(j) g d s to-252(h) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.1 - v/ : r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =18a - - 14 m ? ? ?
ap9t18gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =4.5v 0 0.5 1 1.5 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 20 40 60 80 100 120 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 5.0v 4.5v 3.5v 2.5v v g =1.5v 0 10 20 30 40 50 60 70 80 90 0123 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 5.0v 4.5v 3.5v 2.5v v g =1.5v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 10 14 18 22 26 0246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =9a t c =25 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap9t18gh/j 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =10v v ds =12v v ds =16v t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms dc t c =25 o c s in g le puls e
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9t18gh ywwsss date code (ywwsss) ylast digit of the year wwweek ssssequence logo meet rohs requirement 5
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.50 0.69 0.88 b2 0.60 0.87 1.14 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 5.20 5.35 5.50 e 6.70 7.00 7.30 e1 5.40 5.80 6.20 e ---- 2.30 ---- f 5.88 6.84 7.80 meet rohs requirement for low voltage mosfet only
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